Fun
MOSFET Lab
load line · Q-point · switchingSet gate length and width, dielectric thickness and permittivity, substrate doping, mobility, and temperature. The process cross-section drives Cox, EOT, VTH, subthreshold slope, and DIBL.
Derived compact parameters feed directly into output curves, transfer response, the load line, and Q-point. Compare 180 nm SiO₂, 90 nm logic, 45 nm high-k, and a hot process corner.
operating regionsaturation
derived VTH0.00 V
equivalent oxide EOT0.00 nm
subthreshold slope0 mV/dec
Process-derived output curves · Load lineQ (0.0 V, 0.0 mA)
MOSFET process cross-sectionSiO₂ / Si
Transfer characteristic · ID(VGS)gm 0.0 mS
Subthreshold · log IDIoff 0 A
Process–device interpretation
derived compact parameters
—A first-order electrostatic and α-power compact model. Quantum confinement, random dopants, foundry PDK models, and statistical process variation are not included.